Observation of defect interface states at the CU2O/CUxS junction using thermally stimulated I-V measurements

Kalingamudali, S.R.D.Siripala, W.2012-05-022012-05-022001Sri Lankan Journal of Physics2pp.7-12https://dl.nsf.gov.lk/handle/1/8223PhysicsSemiconductor heterojunctionsI-V characteristicsCU2O/CUxS diodeObservation of defect interface states at the CU2O/CUxS junction using thermally stimulated I-V measurementsArticle