I-V characterisitics of ITO/cuprous oxide/metal junctions

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dc.contributor.authorPerera, L.D.R.D.
dc.contributor.authorSiripala, W.
dc.contributor.authorKalingamudali, S.R.D.
dc.contributor.authorJayanetti, J.K.D.S.
dc.contributor.authorDe Silva, K.T.L.
dc.date.accessioned2016-10-20T09:19:20Z
dc.date.available2016-10-20T09:19:20Z
dc.date.issued1996
dc.identifier.citationProceedings of the 51st Annual Sessions of the Sri Lanka Association for the Advancement of Science:p.160-161
dc.identifier.reportnumberFR 1347T
dc.identifier.researchgrantnumberRG/94/P/003
dc.identifier.urihttps://dl.nsf.gov.lk/handle/1/23423
dc.subjectPhysics
dc.subjectElectrodeposition
dc.subjectCuprous oxide
dc.subjectI-V characteristics
dc.titleI-V characterisitics of ITO/cuprous oxide/metal junctions
dc.typeArticle

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