Employing NiO as a hole collector in solid-state dye-sensitized solar cell

Simple item page
dc.contributor.authorBandara, J.en_US
dc.contributor.authorWeerasinghe, H.Cen_US
dc.date.accessioned2012-05-02T05:52:46Z
dc.date.available2012-05-02T05:52:46Z
dc.date.issued2004en_US
dc.identifier.citationSri Lankan Journal of Physics5pp.11-16en_US
dc.identifier.urihttps://dl.nsf.gov.lk/handle/1/8265
dc.publisherInstitute of Physics. Colomboen_US
dc.subjectPhysicsen_US
dc.subjectSolid state dye sensitized solar cells- SSDSSCen_US
dc.subjectP-type oxide semiconductorsen_US
dc.subjectSSDSSC fabricationen_US
dc.subjectP-type Nio thin layersen_US
dc.subjectHole collectoren_US
dc.subjectPlausible charge transfer mechanismen_US
dc.titleEmploying NiO as a hole collector in solid-state dye-sensitized solar cellen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
SLJP-5-11.pdf
Size:
330.38 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
0 B
Format:
Plain Text
Description:
Download

Collections

Sri Lankan Journal of Physics