Fabrication of P3HT,PCBM inverted solar cells with ZnO electron transport layer

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dc.contributor.authorWanigasekara, R.M.G.
dc.contributor.authorNamawardana, D.G.K.K.
dc.contributor.authorWanninayake, W.T.M.A.P.K.
dc.contributor.authorJayathilaka, K.M.D.C.
dc.contributor.authorWijesundera, R.P.
dc.contributor.authorSiripala, W.
dc.date.accessioned2022-07-21T17:15:07Z
dc.date.available2022-07-21T17:15:07Z
dc.date.issued2021
dc.identifier.citationSri Lankan Journal of Physics,22(1):p.40-49
dc.identifier.urihttps://dl.nsf.gov.lk/handle/1/25608
dc.publisherInstitute of Physics:Colombo
dc.subjectP3HT
dc.subjectPCBM
dc.subjectBulk heterojunction
dc.subjectOPV
dc.subjectZnO
dc.titleFabrication of P3HT,PCBM inverted solar cells with ZnO electron transport layer

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