A study of band gap variation of CdsxSe(1-x) with x aimed at utilization of these materials in solar cell devices
dc.contributor.author | Karunathilaka, S.N. | en_US |
dc.contributor.author | Premaratne, K. | en_US |
dc.date.accessioned | 2013-06-24T09:33:45Z | |
dc.date.available | 2013-06-24T09:33:45Z | |
dc.date.issued | 1997 | en_US |
dc.identifier.citation | Ceylon Journal of Science (Physical Sciences), 4(1):p.15-21 | en_US |
dc.identifier.uri | https://dl.nsf.gov.lk/handle/1/9804 | |
dc.publisher | University of Peradeniya. Peradeniya | en_US |
dc.subject | Physics | en_US |
dc.subject | Solar energy conversion | en_US |
dc.subject | Photoelctrochemical cells | en_US |
dc.subject | Band gap variation | en_US |
dc.subject | CdsxSe(1-x) | en_US |
dc.subject | Solar cell devices | en_US |
dc.subject | Cadmium chalcogenides | en_US |
dc.subject | Electrodeposition | en_US |
dc.subject | Thin polycrystalline films | en_US |
dc.subject | Ternary chalcogenid | en_US |
dc.title | A study of band gap variation of CdsxSe(1-x) with x aimed at utilization of these materials in solar cell devices | en_US |
dc.type | A | en_US |
Files
License bundle
1 - 1 of 1