A study of band gap variation of CdsxSe(1-x) with x aimed at utilization of these materials in solar cell devices

dc.contributor.authorKarunathilaka, S.N.en_US
dc.contributor.authorPremaratne, K.en_US
dc.date.accessioned2013-06-24T09:33:45Z
dc.date.available2013-06-24T09:33:45Z
dc.date.issued1997en_US
dc.identifier.citationCeylon Journal of Science (Physical Sciences), 4(1):p.15-21en_US
dc.identifier.urihttps://dl.nsf.gov.lk/handle/1/9804
dc.publisherUniversity of Peradeniya. Peradeniyaen_US
dc.subjectPhysicsen_US
dc.subjectSolar energy conversionen_US
dc.subjectPhotoelctrochemical cellsen_US
dc.subjectBand gap variationen_US
dc.subjectCdsxSe(1-x)en_US
dc.subjectSolar cell devicesen_US
dc.subjectCadmium chalcogenidesen_US
dc.subjectElectrodepositionen_US
dc.subjectThin polycrystalline filmsen_US
dc.subjectTernary chalcogeniden_US
dc.titleA study of band gap variation of CdsxSe(1-x) with x aimed at utilization of these materials in solar cell devicesen_US
dc.typeAen_US

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