Observation of defect interface states at the CU2O/CUxS junction using thermally stimulated I-V measurements
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Date
2001
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics. Colombo
Abstract
Description
Keywords
Physics, Semiconductor heterojunctions, I-V characteristics, CU2O/CUxS diode
Citation
Sri Lankan Journal of Physics2pp.7-12