Observation of defect interface states at the CU2O/CUxS junction using thermally stimulated I-V measurements

Simple item page
dc.contributor.authorKalingamudali, S.R.D.en_US
dc.contributor.authorSiripala, W.en_US
dc.date.accessioned2012-05-02T05:50:07Z
dc.date.available2012-05-02T05:50:07Z
dc.date.issued2001en_US
dc.identifier.citationSri Lankan Journal of Physics2pp.7-12en_US
dc.identifier.urihttps://dl.nsf.gov.lk/handle/1/8223
dc.publisherInstitute of Physics. Colomboen_US
dc.subjectPhysicsen_US
dc.subjectSemiconductor heterojunctionsen_US
dc.subjectI-V characteristicsen_US
dc.subjectCU2O/CUxS diodeen_US
dc.titleObservation of defect interface states at the CU2O/CUxS junction using thermally stimulated I-V measurementsen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
SLJP-2-7.pdf
Size:
251.72 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
0 B
Format:
Plain Text
Description:
Download

Collections

Sri Lankan Journal of Physics